1. Serin N, 1974, Trap depth measurement by thermoluminescence in Li2B4O7 crystals” Technical Journal, 1, 33.
2. Serin N, “Au/CuO/Cu yapısının anahtarlama özelliği” Doğa Bilim Dergisi, 6/1, 27 (1982)
3. Serin N, 1982 Au/Ge/Sn yapısı ve sıvı azot sıcaklığında kapasite-gerilim ölçmeleri” Doğa Bilim Dergisi, 6/2, 47.
4. Serin N, 1983, Capacitance-voltage measurement of Au/Ge/Sn Structure at liquid nitrogen temperature, Journal of Technical Physics, 24, 1, 121.
5. Serin N, 1983, Au/Ge/Al(Alatim) yapısında akım-gerilim ve kapasite-gerilim ölçmeleri “Doğa Bilim Dergisi, 7/3, 221.
6. Serin N, 1983, Foto-elektrik yöntemle amorf silisyum Schottky diyodlarında engel yüksekliği tayini Doğa Bilim Dergisi 7/3, 412.
7. Serin N, 1984, Cu/a-Si:H/a-Si:H(n-type)/Cr0 Schottky diodes prepared r.f. magnetron sputtering technique, Journal of Physics D:Applied Physics, 17, 1485. doi:10.1088/0022-3727/17/7/021
8. Serin N, 1985, The determination of minority carrier diffusion coefficient from the capacitance-voltage characteristics of Au/Ge Schottky barrier, Applied Physics: A, 36, 209. doi:10.1007/BF00616554
9. Serin, T, Aydınuraz, A. and Serin, N. The annealing effect on the Au/a-Si:H/a-Si:H(n-type)/ Cr Schottky diodes prepared by an r.f. magnetron sputtering technique, Semiconductor Science and Technology, 2, 742-746 (1987). doi:10.1088/0268-1242/2/11/007
10. Serin, T. and Serin, N. Ag/a-Si:H/a-Si:H(n-type)/Cr Schottky diodes prepared by an rf magnetron sputtering technique , Communication, series A2, A3, Physics ,Engineering Physics and Astronomy 36, 1-9 (1987). web:http://dergiler.ankara.edu.tr/dergiler/55/1435/16116.pdf
11. Serin, T. and Serin, N. The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure, Communication, Series A2, A3, Physics, Engineering Physics and Astronomy, 37, 43-52 (1988). web:http://dergiler.ankara.edu.tr/dergiler/55/1441/16185.pdf
12. Serin, T. and Serin, N. The effect of annealing on SnO2/a-SiC:H(p-type)/a-Si:H/a-Si:H(n-type)/Al structure, Semiconductor Science and Technology, 6, 679-683 (1991). doi:10.1088/0268-1242/6/7/021
13. Serin, T. and Serin, N. a-SiC:H ve a-Si:H ince filmlerinden hazırlanmış p/i/n diyodunda engel yüksekliğinin tayini, Tr J. of Physics, 15, 608-615 (1991).
14. Serin, T. “The effect of the surface states on the current-voltage characteristics of Ag/a-Si:H/a-Si:H(n-type)/Cr Schottky diodes, Tr J. of Physics, 17, 812-817 (1993).
15. Serin, T. and Serin, N. Determination of electron diffusion length from photo characteristics of a p/i/n structure”, Applied Physics A, 59, 431-433 (1994). doi:10.1007/BF00331724
16. Serin, T. and Serin, N. The effect of annealing on the resistance of a p/i/n structure, Semiconductor Science and Technology, 9, 2097-2100 (1994). doi:10.1088/0268-1242/9/11/010
17. Serin, T. and Serin, N. The effect of the surface states on the current-voltage characteristics of Au/a-Si:H/a-Si:H(n+-type)/Cr Schottky diodes, Commun Fac.Sci. Univ. Ank. Series A2, A3, 43, 1–7 (1994).
18. Serin T, Serin N, 1994, The effect of the surface states on the current-voltage characteristics of Au/a-Si:H/a-Si:H(n-type)/Cr Schottky diodes” Commun. Fac. Sci. Univ. Ank. Series A3, A2, 43, 1. 33, 3-13.
19. Serin, T. The annealing effect on the capacitance-voltage characteristics of SnO2/a-SiC:H(p+-type)/a-Si:H/a-Si(n+-type)/Al structure, Tr. J. of Physics, 19, 595-600 (1995).
20. Alkan, B, Serin, T. and Ünal, B. Dislocation scattering of electrons in plastically deformed germanium, Semiconductor Science and Technology, 11, 1046-1050 (1996). doi:10.1007/BF00331724
21. Serin, T. The investigation of annealing effect on the density of states in a-Si:H film, Semiconductor Science and Technology, 12, 291-295 (1997). doi:10.1088/0268-1242/12/3/009
22. Serin, T. The thermal equilibrium changes on reverse bias annealing in Schottky diodes, Semiconductor Science and Technology, 12, 1451-1454 (1997). doi:10.1088/0268-1242/12/11/021
23. Serin, T. The investigation of annealing effect on the hydrogenated amorphous silicon pin diodes by capacitance techniques, Semiconductor Science and Technology, 13, 1272-1276 (1998). doi:10.1088/0268-1242/13/11/007
24. Serin, T. The determination of thermal annealing effect on the DOS profile of a-Si:H film, Tr. Journal of Physics, 22, 453-459 (1998).
25. Serin, T, Serin, N. “Effect of reverse-bias annealing on thermal equilibrium changes in hydrogenated amorphous germanium” Semiconductor Science and Technology, 14, 1048-1051 (1999). doi:10.1088/0268-1242/14/12/306
26. Serin, N, Serin, T, Ünal, B. “The effect of humidity on electronic conductivity of an Au/CuO/Cu2O/Cu sandwich structure” Semiconductor Science and Technology, 15, 112-116 (2000). doi:10.1088/0268-1242/15/2/305
27. Serin, T, Serin, N, Tarimci, C, Unal, B. “Determination of thermal annealing effect in intrinsic a-Si:H film”, Journal of Non-Crystalline Solids, 276, 163-168 (2000). doi:10.1016/S0022-3093(00)00265-9
28. S. Karadeniz, N. Serin, “Useful and low cost instrument for capacitance measurements” Review of Scientific Instruments, v 71, N 8, 3193(2000). doi:10.1063/1.1304875
29. N. Serin, T. Serin, A. R. Özdemir, B. Alkan, Ç. Tarımcı, B. Ünal, The Determination of Thermal Annealing Effect on a-Si:H Films Coated on Glass and on Single Crystalline of Silicon, Turkish Journal of Physics, 26, 53-60 (2002). web:http://journals.tubitak.gov.tr/physics/issues/fiz-02-26-1/fiz-26-1-9-9906-8.pdf
30. N. Serin, T. Serin, ”The photocapacitance property of Cu/Cu2O/Au sandwich structures” Semiconductor Science and Technology, 17, 1162-1167 (2002). doi:10.1088/0268-1242/17/11/305
31. N. Serin, T. Serin, S. Karadeniz “Current-limiting property of Cu/cupric oxide/Cu sandwich structure” Semicond. Sci. Technol. 17, 60 (2002). doi:10.1088/0268-1242/17/1/310
32. T. Serin, N. Serin, B. Schröder “Determination of the distribution of electronic states in hydrogenated amorphous germanium by capacitance techniques” Semicond. Sci. Technol. 19, 270 (2004). doi:10.1088/0268-1242/19/2/026
33. Karadeniz S, Tuğluoğlu N, Serin T “Substrate temperature dependence of series resistance in A1/SnO2/p-Si (111) Schottky diodes prepared by spray deposition method “Applied Surface Science 233 5-13 (2004) doi:10.1016/j.apsusc.2004.03.216
34. N. Serin, T. Serin, Ş. Horzum, Y. Çelik ”Annealing effects on the properties of copper oxide thin films prepared by chemical deposition”,Semiconductor Science and Technology, 20, 398 (2005). doi:10.1088/0268-1242/20/5/012
35. S. Karadeniz, N. Tuğluoğlu, T. Serin, N. Serin, ”The energy distribution of the interface state density of SnO2/p-Si (111) heterojunctions prepared at different substrate temperatures by spray deposition method”, Applied Surface Science, 246, 30 (2005). doi:10.1016/j.apsusc.2004.11.022
36. T.Serin, N.Serin, S.Karadeniz, H.Sarı, N.Tuğluoğlu, O.Pakma ”Electrical,structural and optical properties of SnO2 thin films prepared by spray pyrolysis”, Journal of .Non Crystalline. Solids, 352,209-215 (2006) doi:10.1016/j.jnoncrysol.2005.11.031
37. Ş.Altındal, İ.Dökme, M. M. Bülbül, N.Yalçın, T.Serin,”The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range” Microelectronic Engineering 83 499-505 (2006) doi:10.1016/j.mee.2005.11.014
38. T. Uzunoğlu, H. Sarı, R. Çapan, Ç. Tarımcı, T. Serin, N. Serin, H. Namlı, O. Turhan, “ZnS nanoparçacıklar içeren Langmuir-Blodgett ince filmlerin elektriksel özellikleri”, Selçuk Üni. Fen Ed Fak Fen Dergisi, sayı:28, sayfa:65-72 (2006)
39. H. Sarı, T. Uzunoğlu, O. Turhan, “1,3-Bis-(P-İminobenzoik Asit) indan Langmuir-Blodgett (LB) filmlerin elektriksel özellikleri”, Balıkesir Üni. Fen Bilimleri Enstitüsü Dergisi, cilt 8., sayı:1 sayfa:46 (2006)
40. H. Sari, T. Uzunoglu, R. Capan, N. Serin, T. Serin, C. Tarimci, H. Namli, and O. Turhan, ”Investigation of the electrical properties of a novel 1,3-Bis-(p-iminobenzoic acid)indane Langmuir-Blodgett(LB) films containing ZnS nanoparticles JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 7 8 2654-2658 (2007) doi:10.1166/jnn.2007.627
41. O.Pakma, N. Serin, T. Serin and Ş. Altındal ”The double Gaussian distribution of barrier heights in Al/TiO2/p-Si(metal-insulator-semiconductor) structures at low temperatures” Journal of applied physics 104 014501 (2008) doi:10.1063/1.2952028
42. O. Pakma, N. Serin, T. Serin and Ş. Altındal ” Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p+(MOS) structures” J.Phys. D: Appl. Phys. 41 215103 (2008) doi:10.1088/0022-3727/41/21/215103
43. O. Pakma, N. Serin, T. Serin and Ş. Altındal ”  The influence of series resistance and interface states on intersecting behaviour of I-V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures” Semicond. Sci. Technol. 23 105014 (2008) doi:10.1088/0268-1242/23/10/105014
44. O. Pakma, N. Serin, and T. Serin” The effect of repeated annealing temperature on the structural, optical, and electrical properties of TiO2 thin films prepared by dip-coating sol-gel method” J. Mater. Sci. 44 401-407 (2009) doi:10.1007/s10853-008-3145-5
45. O. Pakma, N. Serin, T. Serin and Ş. Altındal ” The effects of prepation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures by using sol-gel method” J. Sol-Gel Sci. Technol. 50 28-34 (2009) doi:10.1007/s10971-009-1895-4
46. E. Sağıroğlu Topallı, K. Topallı, S. E. Alper, T. Serin and T. Akın” Pirani vacuum gauges using silicon on glass and dissolved wafer processes for the characterization of MEMS vacuum packaging” IEEE Sensors Journal 9 263-270 (2009) doi:10.1109/JSEN.2008.2012200
47. Serin, T; Gurakar, S; Serin, N, et al. Current flow mechanism in Cu2O/p-Si heterojunction prepared by chemical method JOURNAL OF PHYSICS D-APPLIED PHYSICS 42 22 225108 (2009) doi:10.1088/0022-3727/42/22/225108
48. Yıldız, A; Serin, N; Serin, T, et al.The effect of intrinsic defects on the hole transport in Cu2O OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 3 10 Pages: 1034-1037 (2009) web:http://oam-rc.inoe.ro/index.php?option=magazine&op=view&idu=835&catid=43
49. Yıldız, A; Serin, N; Serin, T, et al. Crossover from Nearest-Neighbor Hopping Conduction to Efros-Shklovskii Variable-Range Hopping Conduction in Hydrogenated Amorphous Silicon Films JAPANESE JOURNAL OF APPLIED PHYSICS 48 11 111203 (2009) doi:10.1143/JJAP.48.111203
50. Kus, F O; Serin,T; Serin,N Current transport mechanisms of n-ZnO/p-CuO heterojunctions JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 11 I 1 1855-1859 (2009) web:http://joam.inoe.ro/index.php?option=magazine&op=view&idu=2248&catid=44
51. A. Yıldız, N. Serin, M. Kasap, T. Serin, Diana Mardare, The thickness effect on the electrical Conduction mechanism in titanium oxide thin films Journal of Alloys and Compounds 493 (2010) 227–232 doi:10.1016/j.jallcom.2009.12.061